Image sensors and electronic devices

ABSTRACT

An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of, under 35 U.S.C.§ 119, Korean Patent Application No. 10-2018-0013884 filed in the KoreanIntellectual Property Office on Feb. 5, 2018, the entire contents ofwhich are incorporated herein by reference.

BACKGROUND 1. Field

Image sensors and electronic devices are disclosed.

2. Description of the Related Art

Cameras, camcorders, and the like may include image sensors configuredto take (“capture”) one or more images and storing the captured one ormore images as one or more electrical signals. Recently, research onusing one or more sensors as one or more biometric apparatuses also hasbeen made. Various sensors, including image sensors, may be utilized incombination with performing various complex functions, as well asproviding down-sizing and a high resolution, in order to provide variousfunctionalities.

SUMMARY

Some example embodiments provide an image sensor configured to provideimproved performance without having increased physical size.

Some example embodiments provide an electronic device including theimage sensor.

According to some example embodiments, an image sensor may include aphotodiode within a semiconductor substrate, a photoelectric conversiondevice on the semiconductor substrate, and a plurality of color filterson the photoelectric conversion device, such that the photoelectricconversion device is between the plurality of color filters and thesemiconductor substrate. The photodiode may be configured to sense lightin an infrared wavelength spectrum of light. The photoelectricconversion device may be configured to sense light in a visiblewavelength spectrum of light. The photoelectric conversion device mayinclude a pair of electrodes facing each other, and a photoelectricconversion layer between the pair of electrodes. The photoelectricconversion layer may be configured to selectively absorb light in thevisible wavelength spectrum of light.

The photoelectric conversion layer may be configured to absorb light inan entirety of the visible wavelength spectrum of light.

The photoelectric conversion layer may include a p-type semiconductorand an n-type semiconductor, and the n-type semiconductor may includefullerene or a fullerene derivative.

At least one semiconductor of the p-type semiconductor and the n-typesemiconductor may include a light absorbing material configured toabsorb light in at least a part of the visible wavelength spectrum oflight. The p-type semiconductor and the n-type semiconductor may becollectively configured to absorb light in an entirety of the visiblewavelength spectrum of light.

Each semiconductor of the p-type semiconductor and the n-typesemiconductor is configured to not substantially absorb light in theinfrared wavelength spectrum of light.

The photoelectric conversion layer may include an amount of the n-typesemiconductor that is equal or greater than an amount of the p-typesemiconductor in the photoelectric conversion layer.

The photoelectric conversion layer may be an organic photoelectricconversion layer that includes at least one organic light absorbingmaterial.

Each color filter of the plurality of color filters may be configured totransmit light in at least one wavelength spectrum of light of a redwavelength spectrum of light, a green wavelength spectrum of light, anda blue wavelength spectrum of light, and light in the infraredwavelength spectrum of light.

Each color filter of the plurality of color filters may be selected froma red filter, a blue filter, a green filter, a cyan filter, a magentafilter, a yellow filter, and a white filter.

At least one color filter of the plurality of color filters may have anaverage light transmittance of greater than or equal to about 70% in aninfrared wavelength spectrum of light of about 800 nm to about 1000 nm.

The photodiode may be at least partially within the semiconductorsubstrate at a depth of about 0 nm to about 7000 nm from a surface ofthe semiconductor substrate.

The image sensor may further include a visible light blocking filmbetween the semiconductor substrate and the photoelectric conversiondevice.

The image sensor may further include a transflective layer between thesemiconductor substrate and the photoelectric conversion device. Thetransflective layer may be configured to selectively reflect at leastone part of the visible wavelength spectrum of light.

The image sensor may further include a bandpass filter on the pluralityof color filters and configured to selectively transmit light in thevisible wavelength spectrum of light and light in the infraredwavelength spectrum of light.

According to some example embodiments, an image sensor may include acolor filter, an organic photoelectric conversion device, and aninorganic photodiode that are sequentially stacked from a lightincidence direction. The organic photoelectric conversion device may beconfigured to photoelectrically convert light in a visible wavelengthspectrum of light that passes the color filter, and the inorganicphotodiode may be configured to sense light in an infrared wavelengthspectrum of light.

The color filter and the organic photoelectric conversion device may beon a semiconductor substrate, and the inorganic photodiode may be withinthe semiconductor substrate.

The inorganic photodiode may be at least partially within thesemiconductor substrate at a depth of about 0 nm to about 7000 nm from asurface of the semiconductor substrate.

The organic photoelectric conversion device may include a pair ofelectrodes facing each other, and an organic photoelectric conversionlayer between the pair of electrodes and configured to selectivelyabsorb light in the visible wavelength spectrum of light.

The organic photoelectric conversion layer may include an organic lightabsorbing material, and fullerene or a fullerene derivative.

The organic photoelectric conversion layer may be configured to absorblight in an entirety of the visible wavelength spectrum of light.

The color filter may include at least one filter of a red filter, a bluefilter, a green filter, a cyan filter, a magenta filter, a yellowfilter, and a white filter.

An electronic device may include the image sensor.

According to some example embodiments, an image sensor may include aphotodiode within a semiconductor substrate, a photoelectric conversiondevice on the semiconductor substrate, and a filtering element. Thephotodiode may be configured to sense light in a first wavelengthspectrum of light. The photoelectric conversion device may be configuredto selectively absorb light in a second wavelength spectrum of light.The filtering element may be configured to selectively transmit at leasta portion of the first wavelength spectrum of light and the secondwavelength spectrum of light.

The filtering element may include a transflective layer between thesemiconductor substrate and the photoelectric conversion device. Thetransflective layer may be configured to selectively reflect at leastone part of the second wavelength spectrum of light.

The filtering element may be between the semiconductor substrate and thephotoelectric conversion device. The filtering element may be configuredto selectively absorb the first wavelength spectrum of light andselectively transmit the second wavelength spectrum of light.

The first wavelength spectrum of light may be an infrared wavelengthspectrum of light, the second wavelength spectrum of light may be avisible wavelength spectrum of light, and the filtering element may be acolor filter on the photoelectric conversion device, such that thephotoelectric conversion device is between the color filter and thesemiconductor substrate, the color filter configured to selectivelyfilter at least a portion of the visible wavelength spectrum of light.

The image sensor may further include a plurality of color filters, theplurality of color filters including the color filter, wherein eachcolor filter of the plurality of color filters is configured to transmitlight in at least one wavelength spectrum of light of a red wavelengthspectrum of light, a green wavelength spectrum of light, and a bluewavelength spectrum of light, and light in an infrared wavelengthspectrum of light.

Each color filter of the plurality of color filters may be selected froma red filter, a blue filter, a green filter, a cyan filter, a magentafilter, a yellow filter, and a white filter.

At least one color filter of the plurality of color filters may have anaverage light transmittance of greater than or equal to about 70% in aninfrared wavelength spectrum of light of about 800 nm to about 1000 nm.

The image sensor may further include a bandpass filter on the colorfilter and configured to selectively transmit light in the visiblewavelength spectrum of light and light in the infrared wavelengthspectrum of light.

The image sensor may further include an additional photodiode within thesemiconductor substrate, the additional photodiode between thephotodiode and the photoelectric conversion device such that thephotodiode and the additional photodiode overlap in a directionextending substantially orthogonally to the photoelectric conversiondevice, the additional photodiode configured to sense light in aseparate visible wavelength spectrum of light that is different from thevisible wavelength spectrum of light that the photoelectric conversiondevice is configured to selectively absorb.

The photoelectric conversion device may include a photoelectricconversion layer configured to selectively absorb light in the visiblewavelength spectrum of light, and the photoelectric conversion layer maybe configured to absorb light in an entirety of the second wavelengthspectrum of light.

The first wavelength spectrum of light may be an infrared wavelengthspectrum of light, the second wavelength spectrum of light may be avisible wavelength spectrum of light, the photoelectric conversion layermay include a p-type semiconductor and an n-type semiconductor, and then-type semiconductor may include fullerene or a fullerene derivative.

The p-type semiconductor may include at least one light absorbingmaterial configured to absorb light in at least a part of the visiblewavelength spectrum of light, and the p-type semiconductor and then-type semiconductor may be collectively configured to absorb light inan entirety of the visible wavelength spectrum of light.

Each semiconductor of the p-type semiconductor and the n-typesemiconductor may be configured to not substantially absorb light in theinfrared wavelength spectrum of light.

The photoelectric conversion layer may include an amount of the n-typesemiconductor that is equal or greater than an amount the p-typesemiconductor in the photoelectric conversion layer.

The photoelectric conversion layer may be an organic photoelectricconversion layer that includes at least one organic material.

The photodiode may be at least partially within the semiconductorsubstrate at a depth of about 0 nm to about 7000 nm from a surface ofthe semiconductor substrate.

The first wavelength spectrum of light may be an infrared wavelengthspectrum of light, the second wavelength spectrum of light may be avisible wavelength spectrum of light, and the filtering element may be avisible light blocking film between the semiconductor substrate and thephotoelectric conversion device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic top plan view showing a unit pixel of an imagesensor according to some example embodiments,

FIG. 2 is a cross-sectional view showing the image sensor of FIG. 1according to some example embodiments,

FIGS. 3, 4, 5, and 6 are top plan views respectively showing pixelarrays of unit pixels of the image sensor of FIG. 1 according to someexample embodiments,

FIG. 7 is a cross-sectional view showing the image sensor of FIG. 1according to some example embodiments,

FIG. 8 is a cross-sectional view showing the image sensor of FIG. 1according to some example embodiments, and

FIG. 9 is a schematic diagram of an electronic device according to someexample embodiments.

DETAILED DESCRIPTION

Hereinafter, some example embodiments of the present inventive conceptswill be described in detail so that a person skilled in the art wouldunderstand the same. This disclosure may, however, be embodied in manydifferent forms and is not construed as limited to the exampleembodiments set forth herein.

In the drawings, the thickness of layers, films, panels, regions, etc.,are exaggerated for clarity. Like reference numerals designate likeelements throughout the specification. It will be understood that whenan element such as a layer, film, region, or substrate is referred to asbeing “on” another element, it can be directly on the other element orintervening elements may also be present. In contrast, when an elementis referred to as being “directly on” another element, there are nointervening elements present.

In the drawings, parts having no relationship with the description areomitted for clarity of the embodiments, and the same or similarconstituent elements are indicated by the same reference numeralthroughout the specification.

Hereinafter, the terms ‘lower’ and ‘upper’ are used for betterunderstanding and ease of description, but do not limit the positionrelationship.

In the following descriptions, it is described that the light-receivingside is on the image sensor, but this is for the better understandingand ease of description, and does not limit the position relationship.

Hereinafter, an image sensor according to some example embodiments isdescribed.

When the terms “about” or “substantially” are used in this specificationin connection with a numerical value, it is intended that the associatednumerical value include a tolerance of ±10% around the stated numericalvalue. When ranges are specified, the range includes all valuestherebetween such as increments of 0.1%.

FIG. 1 is a schematic top plan view showing one example of a unit pixelof an image sensor according to some example embodiments, FIG. 2 is across-sectional view showing one example of the organic CMOS imagesensor of FIG. 1, and FIGS. 3, 4, 5, and 6 are top plan viewsrespectively showing pixel arrays of unit pixels of the image sensor ofFIG. 1 according to some example embodiments.

Referring to FIG. 1, an image sensor 300 according to some exampleembodiments includes a device 100 sensing light in a visible wavelengthspectrum of light (hereinafter, refer to be a ‘visible light sensingdevice’) and a device 200 sensing light in an infrared wavelengthspectrum of light (hereinafter, an ‘infrared photo-sensing device’). Thevisible light sensing device 100 and the infrared photo-sensing device200 are stacked, and the visible light sensing device 100 is disposednearer to a light-receiving side than the infrared photo-sensing device200.

The visible light sensing device 100 may for example include a unitpixel having a 2×2 matrix structure, for example, a plurality of pixels(VIS1, VIS2, VIS3, and VIS4) sensing light in the same or differentwavelength spectrum of lights in the visible wavelength spectrum oflight. However, the unit pixel is not limited thereto but may havevarious structures such as 3×3 or 4×4.

For example, the visible light sensing device 100 may be a photoelectricconversion device absorbing light in the visible wavelength spectrum oflight and thus photoelectrically converting the light.

The plurality of pixels (VIS1, VIS2, VIS3, and VIS4) of the visiblelight sensing device 100 may be for example independently selected froma red pixel (R) photoelectrically converting light in a red wavelengthspectrum of light; a green pixel (G) photoelectrically converting lightin a green wavelength spectrum of light; a blue pixel (B)photoelectrically converting light in a blue wavelength spectrum oflight; a cyan pixel (C) photoelectrically converting light in the bluewavelength spectrum of light and the green wavelength spectrum of light;a magenta pixel (M) photoelectrically converting light in the bluewavelength spectrum of light and the red wavelength spectrum of light; ayellow pixel (Y) photoelectrically converting light in the greenwavelength spectrum of light and the red wavelength spectrum of light;and a white pixel (W) photoelectrically converting light in the bluewavelength spectrum of light, the green wavelength spectrum of light,and the red wavelength spectrum of light.

For example, referring to FIG. 3, a unit pixel of the visible lightsensing device 100 may have a RGB array of one red pixel (R), one bluepixel (B), and two green pixels (G).

For example, referring to FIG. 4, the unit pixel of the visible lightsensing device 100 may have a RGBW array of one red pixel (R), one bluepixel (B), one green pixel (G), and one white pixel (W).

For example, referring to FIG. 5, the unit pixel of the visible lightsensing device 100 may have a CMGY array of one cyan pixel (C), onemagenta pixel (M), one green pixel (G), and one yellow pixel (Y).

For example, referring to FIG. 6, the unit of the visible light sensingdevice 100 may have a CYYM array of one cyan pixel (C), one magentapixel (M), and two yellow pixels (Y).

An infrared photo-sensing device 200 may include a plurality of pixelsin which a photodiode is disposed, and the plurality of pixels havingthe photodiode may be arranged as a matrix format along a column and/ora row. The photodiode may sense light in an infrared wavelength spectrumof light (IR).

Referring to FIG. 2, the visible light sensing device 100 and theinfrared photo-sensing device 200 are stacked and respectively disposedin (“within”) and out of a semiconductor substrate 210. Specifically,the visible light sensing device 100 includes a photoelectric conversiondevice 120 and a color filter layer 110 on the semiconductor substrate210, and the infrared photo-sensing device 200 includes a photodiode 220integrated in the semiconductor substrate 210. As shown in FIG. 2, thephotodiode 220, is integrated in the semiconductor substrate 210 andthus is “within” the semiconductor substrate 210, as the photodiode 220is entirely located within a volume of space defined by the outersurfaces of the semiconductor substrate 210, including surface 210 a.The photoelectric conversion device 120, the color filter layer 110, andthe photodiode 220 may be overlapped (e.g., may overlap in a directionextending orthogonally to surface 210 a). Accordingly, as shown in FIG.2, the color filter layer 110 (including one or more color filters 110a, 110 b, and 110 c according to some example embodiments), an organicphotoelectric conversion device (e.g., the photoelectric conversiondevice 120 according to some example embodiments), and an inorganicphotodiode (e.g., one or more of the photodiodes 220 a, 220 b, and 220 caccording to some example embodiments) may be sequentially stacked froma light incidence direction (e.g., a direction extending towards thefocusing lenses 330 from the semiconductor substrate 210). As describedfurther herein, the image sensor 300 may include one or more filteringelements, and the color filter layer 110 may be understood to be afiltering element.

The visible light sensing device 100 includes the photoelectricconversion device 120 disposed on the whole (“entire”) surface of animage sensor 300 and the color filter layer 110 disposed on thephotoelectric conversion device 120. Accordingly, as shown in FIG. 2,the color filter layer 110 may include one or more color filters 110 a,110 b, and 110 c on the photoelectric conversion device 120 such thatthe photoelectric conversion device 120 is between the one or more colorfilters 110 a, 110 b, and 110 c and the semiconductor substrate 210,wherein the one or more color filters 110 a, 110 b, and 110 c are eachconfigured to selectively filter at least a portion of a visiblewavelength spectrum of light that the photoelectric conversion device120 is configured to sense.

The photoelectric conversion device 120 includes lower electrodes 121 a,121 b, and 121 c and an upper electrode 122 facing each other and aphotoelectric conversion layer 123 disposed between the lower electrodes121 a, 121 b, and 121 c and the upper electrode 122. In some exampleembodiments, the photoelectric conversion device 120 includes anindividual lower electrode (e.g., lower electrode 121 a) and an upperelectrode 122 (e.g., a pair of electrodes) facing each other and aphotoelectric conversion layer 123 between the pair of electrodes.

The lower electrodes 121 a, 121 b, and 121 c may be pixel electrodes andthus, independently operated in each pixel. The upper electrode 122 maybe a common electrode and also, a light receiving electrode disposed ata light-receiving side.

The lower electrodes 121 a, 121 b, and 121 c and the upper electrode 122may be a light-transmitting electrode and the light-transmittingelectrode may be for example made of a conductive oxide such as anindium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tinoxide (SnO), aluminum tin oxide (AITO), and fluorine doped tin oxide(FTO), or a metal thin layer of a single layer or a multilayer, but isnot limited thereto.

The photoelectric conversion layer 123 is disposed between the lowerelectrodes 121 a, 121 b, and 121 c and the upper electrode 122 andformed on the whole surface of the image sensor 300.

The photoelectric conversion layer 123 may include a light absorbingmaterial configured to absorb light in a visible wavelength spectrum oflight but not substantially absorbing light (e.g., not absorbing lightwithin manufacturing tolerances and/or material tolerances) in aninfrared wavelength spectrum of light. Herein, the visible wavelengthspectrum of light may be for example about 380 nm to about 700 nm, theinfrared wavelength spectrum of light may include a near infraredwavelength spectrum of light, a mid-infrared wavelength spectrum oflight, and a far-infrared wavelength spectrum of light, for example,greater than about 700 nm, for example, greater than or equal to about750 nm, or for example, greater than or equal to about 780 nm, forexample, in the near infrared wavelength spectrum of light, greater thanabout 700 nm and less than or equal to about 3000 nm, about 750 nm toabout 3000 nm, about 780 nm to about 3000 nm, about 800 nm to about 3000nm, about 800 nm to about 2000 nm, or about 800 nm to about 1000 nm.

In some example embodiments, the photoelectric conversion layer 123 isconfigured to absorb light in an entirety of a visible wavelengthspectrum of light (e.g., a first visible wavelength spectrum of light),and the photoelectric conversion device 120 may be configured to sense avisible wavelength spectrum of light that may be equal to or a limitedportion of the entirety of the visible wavelength spectrum of light. Asdescribed herein, the photoelectric conversion device 120 may includeseparate photoelectric conversion regions 120 a, 120 b, and 120 c thatare each configured to sense a separate visible wavelength spectrum oflight that is a limited portion of the entirety of the visiblewavelength spectrum of light. As shown in FIG. 2, the photoelectricconversion device may be configured to photoelectrically convert lightin a visible wavelength spectrum of light that passes the color filterlayer 110 (e.g., one or more of the color filters 110 a, 110 b, and 110c).

The photoelectric conversion layer 123 may include one or more kinds oflight absorbing material, for example, a light absorbing materialconfigured to absorb light in a whole visible wavelength spectrum oflight, or a plurality of light absorbing materials absorbing light indifferent regions of the visible wavelength spectrum of light. Thephotoelectric conversion layer 123 may be an organic photoelectricconversion layer that includes at least one organic light absorbingmaterial. Accordingly, the photoelectric conversion device 120 may be anorganic photoelectric conversion device.

The photoelectric conversion layer 123 may include a p-typesemiconductor and an n-type semiconductor, where the p-typesemiconductor and the n-type semiconductor may collectively form(“comprise”) a pn junction.

At least one of the p-type semiconductor and the n-type semiconductormay include a light absorbing material capable of absorbing light in atleast a part of a visible wavelength spectrum of light, for example alight absorbing material capable of selectively absorbing light in thefull (“entire”) visible wavelength spectrum of light. For example, atleast one semiconductor of the p-type semiconductor and the n-typesemiconductor may be an organic light absorbing material. For example,each of the p-type semiconductor and the n-type semiconductor may notinclude silicon (Si). For example, each semiconductor of the p-typesemiconductor and the n-type semiconductor may not substantially absorblight in an infrared wavelength spectrum of light. Restated, eachsemiconductor of the p-type semiconductor and the n-type semiconductormay be configured to not substantially absorb light in the infraredwavelength spectrum of light.

In some example embodiments, at least one semiconductor of the p-typesemiconductor and the n-type semiconductor includes a light absorbingmaterial configured to absorb light in at least a part of the visiblewavelength spectrum of light, and the at least one semiconductor of thep-type semiconductor and the n-type semiconductor are collectivelyconfigured to absorb light in an entirety of the visible wavelengthspectrum of light.

For example, the p-type semiconductor may include at least one lightabsorbing material configured to absorb light in at least a part of thevisible wavelength spectrum of light, for example, a light absorbingmaterial configured to absorb light in the whole visible wavelengthspectrum of light or in different regions of the visible wavelengthspectrum of light. For example, at least one of the p-typesemiconductors may be an organic light absorbing material.

The p-type semiconductor may include for example at least one selectedfrom a thiophene compound such as poly-3-hexyl thiophene, poly-3-butylthiophene; a phenylenevinylene compound such as poly[2-methyl,5-(3′,7′-dimethyloctyloxy)]-1,4-phenylenevinylene (MDMOPPV),poly[2-methoxy, 5-(2-ethyl-hexyloxy)-1,4-phenylvinylene] (MEH-PPV); afluorene compound such aspoly[2,7-(9,9-dioctyl-fluorene)-alt-5,5(2,3,6,7-tetraphenyl-9,10-dithien-2-ylpyrazino[2,3-g]quinoxaline)], poly[2,7-(9,9-dioctylfluorene)-alt-5,5-(2,3-bis(4-(2-ethylhexyloxy)phenyl)-5,7-di(thiophene-2-yl)thieno[3,4-b]pyrazine)]),and the like; a benzothiadiazole compound such aspoly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)(PCDTBT),[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)](PCPDTBT), and the like; phthalocyanine including a coordinated centermetal of Cu, Fe, Co, Ni, and the like, a phthalocyanine compound such asmetal-free phthalocyanine, aluminum chlorophthalocyanine, indiumphthalocyanine, or gallium phthalocyanine; anthracene; tetracene;pentacene; a hydrazone compound; a pyrazoline compound; atriphenylmethane compound; triphenylamine compound; and a copolymerthereof, but is not limited thereto.

The p-type semiconductor may include for example at least one of a lightabsorbing material configured to absorb light in a red wavelengthspectrum of light, a light absorbing material configured to absorb lightin a green wavelength spectrum of light, and a light absorbing materialconfigured to absorb light in a blue wavelength spectrum of light.

For example, the n-type semiconductor may be a light absorbing materialthat absorbs at least one part of a visible wavelength spectrum oflight, for example fullerene such as C60, C70, C71, C74, C76, C78, C82,C84, C720 or C860; non-fullerene; thiophene; a derivative thereof; or acombination thereof. The fullerene derivative may be for example[6,6]-phenyl-C61-butyric acid methyl ester (PCBM),[6,6]-phenyl-C71-butyric acid methyl ester, and the like, but is notlimited thereto. For example, the n-type semiconductor may includefullerene or a fullerene derivative.

For example, at least one p-type semiconductor and an n-typesemiconductor may be combined to absorb light in a full visiblewavelength spectrum of light (e.g., an entirety of the visiblewavelength spectrum of light).

For example, the p-type semiconductor may be at least one organic lightabsorbing material and the n-type semiconductor may be fullerene or afullerene derivative. Accordingly, the photoelectric conversion layer123 may include 1) an organic light absorbing material and 2) fullereneor a fullerene derivative.

The photoelectric conversion layer 123 may include a p-typesemiconductor and an n-type semiconductor that are mixed in a particular(or, alternatively, predetermined) ratio to provide a bulkheterojunction structure and the p-type semiconductor and the n-typesemiconductor may be for example included in a volume ratio of about1:100 to about 100:1, about 1:50 to about 50:1, about 1:10 to about10:1, about 1:5 to about 5:1, or about 1:1. For example, the n-typesemiconductor may be included in the same amount as or a greater amountthan the p-type semiconductor. Restated, the photoelectric conversionlayer 123 may include an amount of the n-type semiconductor that isequal or greater than an amount of the p-type semiconductor in thephotoelectric conversion layer 123. For example, in the intrinsic layer(I layer), the p-type semiconductor and the n-type semiconductor may beincluded in a volume ratio of about 1:1 to about 1:10.

The photoelectric conversion layer 123 may include a p-type layerincluding the p-type semiconductor and an n-type layer including then-type semiconductor. The p-type layer may include the p-typesemiconductor and the n-type layer may include the n-type semiconductor.For example, a thickness of the n-type layer may be the same as orlarger than that of the p-type layer, and for example a thickness ratioof the p-type layer and the n-type layer may range from about 1:1 toabout 1:10.

The photoelectric conversion layer 123 may be various combinations of anintrinsic layer (I layer), a p-type layer/an n-type layer, a p-typelayer/an I layer, an I layer/an n-type layer, a p-type layer/an Ilayer/an n-type layer, and the like. Herein, the intrinsic layer may bea mixed layer of the p-type semiconductor and the n-type semiconductor.

The photoelectric conversion layer 123 may have a thickness of about 1nm to about 500 nm. Within the range, the photoelectric conversion layer123 may have for example a thickness of about 5 nm to about 300 nm, forexample about 5 nm to about 200 nm.

The photoelectric conversion layer 123 absorbs light in a visiblewavelength spectrum of light to produce excitons, separates the producedexcitons into holes and electrons, and then separated holes aretransported into an anode that is one of the lower electrodes 121 a, 121b, and 121 c and the upper electrode 122 and separated electrons aretransported into a cathode that is the other of the lower electrode 121a, 121 b, and 121 c and the upper electrode 122 to exhibit aphotoelectric conversion effect. The separated electrons and/or holesmay be collected in charge storages 230 a, 230 b, and 230 c.

The photoelectric conversion device 120 may further include an auxiliarylayer (not shown) disposed between the lower electrodes 121 a, 121 b,and 121 c and the photoelectric conversion layer 123 and/or between theupper electrode 122 and the photoelectric conversion layer 123. Theauxiliary layer may be a charge auxiliary layer, a light absorbingauxiliary layer, or a combination thereof, but is not limited thereto.

The auxiliary layer may include for example at least one selected from ahole injection layer for facilitating hole injection, a hole transportlayer for facilitating hole transport, an electron blocking layer forpreventing electron transport, an electron injection layer forfacilitating electron injection, an electron transport layer forfacilitating electron transport, and a hole blocking layer forpreventing hole transport.

The auxiliary layer may include for example an organic material, aninorganic material, or an organic/inorganic material. The organicmaterial may be an organic material having hole or electroncharacteristics and the inorganic material may be for example a metaloxide such as a molybdenum oxide, a tungsten oxide, or a nickel oxide,but is not limited thereto.

The photoelectric conversion device 120 may have a thickness of lessthan or equal to about 1.5 μm, and within the range, for example, lessthan or equal to about 1.2 μm, or for example, less than or equal toabout 1.0 μm.

The color filter layer 110 is disposed on the photoelectric conversiondevice 120 and includes color filters 110 a, 110 b, and 110 c disposedin each pixel. As shown in FIG. 2, the color filters 110 a, 110 b, and110 c may be on the photoelectric conversion device 120, such that thephotoelectric conversion device 120 is between the color filters 110 a,110 b, and 110 c and the semiconductor substrate 210. The color filters110 a, 110 b, and 110 c may separate light flowing into thephotoelectric conversion device 120 depending on a wavelength and thustransmit light in a particular (or, alternatively, predetermined)wavelength spectrum of light.

The color filters 110 a, 110 b, and 110 c may transmit light in avisible wavelength spectrum of light and an infrared wavelength spectrumof light, and each color filter 110 a, 110 b, and 110 c may transmitlight in the same or different wavelength spectrum of light out of thevisible wavelength spectrum of light.

For example, the color filters 110 a, 110 b, and 110 c may independentlypass light of at least one of a blue wavelength spectrum of light, agreen wavelength spectrum of light, and a red wavelength spectrum oflight and commonly light in an infrared wavelength spectrum of light.Restated, each color filter of the color filters 110 a, 110 b, and 110 cmay be configured to transmit 1) light in at least one wavelengthspectrum of light of a red wavelength spectrum of light, a greenwavelength spectrum of light, and a blue wavelength spectrum of light,and 2) light in an infrared wavelength spectrum of light.

Herein, the blue wavelength spectrum of light may be in a range of about380 nm to about 490 nm, the green wavelength spectrum of light may befor example in a range of about 500 nm to about 600 nm, and the redwavelength spectrum of light may be in a range of about 610 nm to about700 nm. In addition, herein, the infrared wavelength spectrum of lightmay include a near infrared wavelength spectrum of light, a mid-infraredwavelength spectrum of light, and a far-infrared wavelength spectrum oflight, for example, greater than about 700 nm, for example, greater thanor equal to about 750 nm, or for example greater than or equal to about780 nm, for example, the near infrared wavelength spectrum of light, forexample, greater than about 700 nm and less than or equal to about 3000nm, about 750 nm to about 3000 nm, about 780 nm to about 3000 nm, about800 nm to about 3000 nm, about 800 nm to about 2000 nm, or about 800 nmto about 1000 nm. In addition, herein, the ‘transmission’ may indicateaverage light transmittance of greater than or equal to about 60%,greater than or equal to about 65%, greater than or equal to about 70%,greater than or equal to about 75%, or greater than or equal to about80% in each wavelength spectrum of light. Accordingly, for example, atleast one color filter of the plurality of color filters 110 a, 110 b,110 c may have an average light transmittance of greater than or equalto about 70% in an infrared wavelength spectrum of light of about 800 nmto about 1000 nm. In addition, herein, the ‘selective transmission’ mayindicate that transmittance in a particular wavelength spectrum of lightout of the visible wavelength spectrum of light is remarkably higherthan transmittance in the other wavelength spectrum of lights of thevisible wavelength spectrum of light, for example, greater than or equalto about twice, greater than or equal to about three times, greater thanor equal to about 4 times, or greater than or equal to about 5 timeshigher than transmittance in the other wavelength spectrum of lights ofthe visible wavelength spectrum of light.

For example, each color filter 110 a, 110 b, and 110 c may pass light inat least one of blue, green, and red wavelength spectrum of lightsgreater than or equal to about twice, greater than or equal to about 3times, greater than or equal to about 4 times, or greater than or equalto about 5 times as high as in other wavelength spectrum of lights ofthe visible wavelength spectrum of light, and the infrared wavelengthspectrum of light of the color filters 110 a, 110 b, and 110 c, forexample, a region of about 800 nm to 1000 nm may have average lighttransmittance of greater than or equal to about 60%, greater than orequal to about 65%, greater than or equal to about 70%, greater than orequal to about 75%, or greater than or equal to about 80%.

For example, each color filter 110 a, 110 b, and 110 c may be selectedfrom a blue filter selectively transmitting light in a blue wavelengthspectrum of light and in an infrared wavelength spectrum of light; agreen filter selectively transmitting light in a green wavelengthspectrum of light and in the infrared wavelength spectrum of light; anda red filter selectively transmitting light in a red wavelength spectrumof light and in the infrared wavelength spectrum of light.

For example, each color filter 110 a, 110 b, and 110 c may be selectedfrom a cyan filter selectively transmitting light in a blue wavelengthspectrum of light, a green wavelength spectrum of light, and an infraredwavelength spectrum of light; a magenta filter selectively transmittinglight in the blue wavelength spectrum of light, a red wavelengthspectrum of light, and the infrared wavelength spectrum of light; ayellow filter selectively transmitting light in the green wavelengthspectrum of light, the red wavelength spectrum of light, and theinfrared wavelength spectrum of light; and a white filter selectivelytransmitting light in the blue wavelength spectrum of light, the greenwavelength spectrum of light, the red wavelength spectrum of light, andthe infrared wavelength spectrum of light.

For example, the color filter layer 110 may include at least one bluefilter, at least one green filter, and at least one red filter.

For example, the color filter layer 110 may include at least one bluefilter, at least one green filter, at least one red filter, and at leastone white filter.

For example, the color filter layer 110 may include at least one cyanfilter, at least one magenta filter, and at least one yellow filter.

For example, the color filter layer 110 may include at least one cyanfilter, at least one magenta filter, at least one yellow filter, and atleast one white filter.

For example, the color filter layer 110 may include at least one of ablue filter, a green filter, and a red filter and at least one of a cyanfilter, a magenta filter, and a yellow filter.

For example, the color filter layer 110 may include at least one of ablue filter, a green filter, a red filter a cyan filter, a magentafilter, a yellow filter, and a white filter.

The photoelectric conversion device 120 may include a plurality ofphotoelectric conversion regions 120 a, 120 b, and 120 c correspondingto each pixel. Each photoelectric conversion region 120 a, 120 b, and120 c may be defined as a region partitioned by lower electrodes 121 a,121 b, and 121 c, the photoelectric conversion layer 123, the upperelectrode 122, and the color filters 110 a, 110 b, and 110 c andcorrespond to one of pixels (VIS1, VIS2, VIS3, VIS4) shown in FIG. 1.

For example, the photoelectric conversion device 120 may include a firstphotoelectric conversion region 120 a defined by a region where thelower electrode 121 a, the photoelectric conversion layer 123, the upperelectrode 122, and the color filter 110 a are overlapped; a secondphotoelectric conversion region 120 b defined by a region where thelower electrode 121 b, the photoelectric conversion layer 123, the upperelectrode 122, and the color filter 110 b are overlapped; and a thirdphotoelectric conversion region 120 c defined by a region where thelower electrode 121 c, the photoelectric conversion layer 123, the upperelectrode 122, and the color filter 110 c are overlapped.

In some example embodiments, each separate photoelectric conversionregion 120 a, 120 b, and 120 c may be understood to be a separatephotoelectric conversion device configured to sense light in a visiblewavelength spectrum of light, where each separate photoelectricconversion device includes a pair of electrodes (upper electrode 122 anda separate electrode of lower electrodes 121 a to 121 c) facing eachother and a photoelectric conversion layer 123 between the pair ofelectrodes, where the photoelectric conversion layer 123 is configuredto selectively absorb light in a visible wavelength spectrum of light.As shown in FIG. 2, each separate photoelectric conversion region 120 ato 120 c may include a separate color filter 110 a to 110 c which may beconfigured to selectively transmit a different visible wavelengthspectrum of light. Accordingly, while the photoelectric conversion layer123 of each photoelectric conversion region 120 may be configured toselectively absorb light in a first visible wavelength spectrum oflight, each separate photoelectric conversion region 120 may beconfigured to sense light in a separate visible wavelength spectrum oflight that is a separate, limited portion of the first wavelengthspectrum of visible light. In some example embodiments, for examplewhere a photoelectric conversion region 120 includes a color filter 110(e.g., a white color filter) that is configured to transmit an entiretyof the visible wavelength spectrum of light that the photoelectricconversion layer 123 is configured to selectively absorb, thephotoelectric conversion region 120 may be configured to sense light inan entirety of the same visible wavelength spectrum of light that thephotoelectric conversion layer is configured to selectively absorb.

Which one of the first to third photoelectric conversion regions 120 a,120 b, and 120 c is photoelectrically converted into a visible raywavelength spectrum of light may be determined by light selectivelytransmitted by the color filters 110 a, 110 b, and 110 c.

For example, when the color filter 110 a is a blue filter, thephotoelectric conversion layer 123 of the first photoelectric conversionregion 120 a may be selectively supplied with light in a blue wavelengthspectrum of light of the visible wavelength spectrum of light and thusabsorb and photoelectrically convert it.

For example, when the color filter 110 b is a green filter, thephotoelectric conversion layer 123 of the second photoelectricconversion region 120 b may be supplied with light in a green wavelengthspectrum of light of the visible wavelength spectrum of light and thusselectively absorb and photoelectrically convert it.

For example, when the color filter 110 c is a red filter, thephotoelectric conversion layer 123 of the third photoelectric conversionregion 120 c may be supplied with light in a red wavelength spectrum oflight of the visible wavelength spectrum of light and thus selectivelyabsorb and photoelectrically convert it.

For example, when the color filter 110 a is a cyan filter, thephotoelectric conversion layer 123 of the first photoelectric conversionregion 120 a may be supplied with light in blue and green wavelengthspectrum of lights of the visible wavelength spectrum of light and thusabsorb and photoelectrically convert it.

For example, when the color filter 110 b is a magenta filter, thephotoelectric conversion layer 123 of the second photoelectricconversion region 120 b may be supplied with light in blue and redwavelength spectrum of lights of the visible wavelength spectrum oflight and thus absorb and photoelectrically convert it.

For example, when the color filter 110 c is a yellow filter, thephotoelectric conversion layer 123 of the third photoelectric conversionregion 120 c may be supplied with light in green and red wavelengthspectrum of lights of the visible region and thus absorb andphotoelectrically convert it.

Accordingly, the first to third photoelectric conversion regions 120 a,120 b, and 120 c may photoelectrically convert light in the same ordifferent visible ray wavelength spectrum of light one another dependingon the color filters 110 a, 110 b, and 110 c.

The infrared photo-sensing device 200 may be disposed beneath thevisible light sensing device 100 and thus sense light in an infraredwavelength spectrum of light passing the visible light sensing device100. As described above, light in the visible ray is absorbed andphotoelectrically converted in the visible light sensing device 100 andthus not supplied to the infrared photo-sensing device 200.

The infrared photo-sensing device 200 may be photodiodes 220 a, 220 b,and 220 c integrated in the semiconductor substrate 210, and thephotodiodes 220 a, 220 b, and 220 c may be overlapped with the colorfilters 110 a, 110 b, and 110 c. One or more of the photodiodes 220 a,220 b, and 220 c may be an inorganic photodiode. The photodiodes 220 a,220 b, and 220 c may sense light passing the color filters 110 a, 110 b,and 110 c and the photoelectric conversion device 120 in each pixel andindependently light in an infrared wavelength spectrum of light.Restated, one or more of the photodiodes 220 a, 220 b, and 220 c may beconfigured to sense light in an infrared wavelength spectrum of light.For example, as described above, each color filter 110 a, 110 b, and 110c may transmit light in a part of the visible wavelength spectrum oflight and an infrared wavelength spectrum of light, the light in thevisible wavelength spectrum of light passing each color filter 110 a,110 b, and 110 c may be respectively absorbed in the photoelectricconversion layer 30 of each photoelectric conversion region 120 a, 120b, and 120 c, and accordingly, the photodiode 220 a, 220 b, and 220 cmay sense light in an infrared wavelength spectrum of light. Theinfrared wavelength spectrum of light may be a limited portion of anentirety of an infrared wavelength spectrum of light (e.g., may be anear-infrared wavelength spectrum of light instead of a combination ofnear-infrared and far-infrared wavelength spectra of light).

The semiconductor substrate 210 may be an inorganic semiconductorsubstrate, for example, a silicon substrate or an InGaAs substrate. Thephotodiodes 220 a, 220 b, and 220 c may be disposed deep enough to senselight in an infrared wavelength spectrum of light in the semiconductorsubstrate 210, for example, the depth may be at least partially in arange of about 0 nm to about 7000 nm from the surface of thesemiconductor substrate 210. Restated, and as shown in at least FIG. 2,one or more of the photodiodes 220 a, 220 b, and 220 c may be at leastpartially within the semiconductor substrate 210 at a depth of about 0nm to about 7000 nm from a surface 210 a of the semiconductor substrate210.

The charge storages 230 a, 230 b, and 230 c and transmission transistor(not shown) are also in the semiconductor substrate 210. The chargestorages 230 a, 230 b, and 230 c may be electrically connected to eachof the photoelectric conversion regions 120 a, 120 b, and 120 c of thephotoelectric conversion device 120 to transfer information to thetransmission transistor and the transmission transistor may receiveinformation from the photodiodes 220 a, 220 b, and 220 c and the chargestorages 230 a, 230 b, and 230 c.

A metal wire (not shown) and a pad (not shown) are formed on or underthe semiconductor substrate 210. In order to decrease signal delay, themetal wire and pad may be made of a metal having low resistivity, forexample, aluminum (Al), copper (Cu), silver (Ag), and alloys thereof,but are not limited thereto.

An insulation layer 310 may be formed between the semiconductorsubstrate 210 and the photoelectric conversion device 120. Theinsulation layer 310 may include an organic, inorganic, and/ororganic/inorganic insulating material, for example an inorganicinsulating material such as a silicon oxide and/or a silicon nitride, ora low dielectric constant (low K) material such as SiC, SiCOH, SiCO, andSiOF. The insulation layer 310 may be for example a transparentinsulation layer. The insulation layer 310 has a trench exposing thecharge storages 230 a, 230 b, and 230 c. The trench may be filled withfillers.

A focusing lens 330 may be formed on the photoelectric conversion device120. The focusing lens 330 may control a direction of incident light andgather the light in one region. The focusing lens 330 may have a shapeof, for example, a cylinder or a hemisphere, but is not limited thereto.

A planarization layer 320 is formed under the focusing lens 330. Theplanarization layer 320 eliminates steps of the color filter layer 110and planarizes it. The planarization layer 320 may include an organic,inorganic, and/or organic/inorganic insulating material. Theplanarization layer 320 may be omitted.

A bandpass filter 340 is on the focusing lens 330. The bandpass filter340 may be configured to selectively transmit light in a particular (or,alternatively, predetermined) wavelength spectrum of light, for example,light in the visible wavelength spectrum of light and an infraredwavelength spectrum of light.

For example, the bandpass filter 340 may transmit light in the wholevisible wavelength spectrum of light and the whole infrared wavelengthspectrum of light.

For example, the bandpass filter 340 may selectively transmit light inthe whole visible ray and light in a near-infrared wavelength spectrumof light, which may be a limited portion of the entirety of the infraredwavelength spectrum of light.

For example, the bandpass filter 340 may selectively transmit light inthe whole visible ray and light in a particular (or, alternatively,predetermined) wavelength spectrum of light of the infrared wavelengthspectrum of light. Herein, the particular (or, alternatively,predetermined) wavelength spectrum of light of the infrared wavelengthspectrum of light may be determined depending on use of an image sensor300, for example, belong to a wavelength spectrum of light of about 780nm to about 1000 nm within the range, for example, a wavelength spectrumof light of about 780 nm to about 900 nm within the range, for example,a wavelength spectrum of light of about 780 nm to about 840 nm withinthe range, for example, a wavelength spectrum of light of about 800 nmto about 830 nm within the region, for example, a wavelength spectrum oflight of about 805 nm to about 815 nm within the range, for example, awavelength spectrum of light of about 810 nm, and according to someexample embodiments, for example, a wavelength spectrum of light ofabout 780 nm to about 1000 nm, for example, a wavelength spectrum oflight of about 830 nm to about 1000 nm within the range, for example, awavelength spectrum of light of about 910 nm to about 970 nm within therange, for example, a wavelength spectrum of light of about 930 nm toabout 950 nm within the range, for example, a wavelength spectrum oflight of about 935 nm to about 945 nm within the range, and for example,a wavelength spectrum of light of about 940 nm within the range.

In the drawing, a structure of the bandpass filter 340 on the focusinglens 330 is shown, but the bandpass filter 340 may be beneath thefocusing lens 330.

It will be understood herein that an element that is “on” anotherelement may be above or beneath the other element, and may be “directly”on (e.g., in contact with) or “indirectly” on (e.g., spaced apart fromwith an interposing element and/or space) the other element.

As described further herein, the image sensor 300 may include one ormore filtering elements, and the bandpass filter 340 may be understoodto be a filtering element.

Am image sensor according to some example embodiments has a structurethat a visible light sensing device absorbing and photoelectricallyconverting light in a visible wavelength spectrum of light and aninfrared photo-sensing device sensing light in an infrared wavelengthspectrum of light are stacked and thus may realize a high sensitivityimage sensor without adding a separate infrared light-sensing pixelunder a low illumination environment.

In addition, the image sensor according to some example embodiments hasa structure that a visible light sensing device absorbing andphotoelectrically converting light in a visible wavelength spectrum oflight and an infrared photo-sensing device sensing light in an infraredwavelength spectrum of light are stacked and thus may realize acomposite sensor including sensors performing different functions oneanother without increasing a size of the image sensor, for example, acomposite sensor including an image sensor using the visible lightsensing device, an iris sensor using the infrared photo-sensing device,or a depth sensor.

In addition, the image sensor according to some example embodiments hasa structure that the visible light sensing device and the infraredphoto-sensing device are stacked wherein the visible light sensingdevice is disposed near to a light-receiving side to reduce an influenceof the infrared photo-sensing device on the visible light sensing deviceand/or an influence of the visible light sensing device on the infraredphoto-sensing device and thus may improve performance of the imagesensor.

Specifically, as for a photodiode having a structure that the infraredphoto-sensing device is disposed nearer to the light-receiving side thanthe visible light sensing device, for example, that the infraredphoto-sensing device is a photoelectric conversion device, and thevisible light sensing device is integrated in a semiconductor substrate,at least a part of a p-type semiconductor and/or an n-type semiconductorincluded in a photoelectric conversion layer of the photoelectricconversion device may inevitably use a light absorbing materialconfigured to absorb light in a visible wavelength spectrum of light andthus reduce light in the visible wavelength spectrum of light flowing inthe photodiode. Particularly, when a fullerene or fullerene derivativeis used as the n-type semiconductor included in the photoelectricconversion layer, the light in a blue wavelength spectrum of lightflowing into the photodiode due to light-blue wavelength spectrum oflight absorption characteristics of the fullerene or fullerenederivative is reduced, and thus optical performance of the image sensormay be deteriorated.

In addition, when an amount of the light absorbing material configuredto absorb light in a visible wavelength spectrum of light is decreasedin the infrared photo-sensing device in order to prevent the performancedegradation of the image sensor, electric characteristics of theinfrared photo-sensing device are deteriorated, and thus electricalperformance of the image sensor also may be deteriorated.

Accordingly, the image sensor according to some example embodiments hasa structure that the visible light sensing device is disposed near to alight-receiving side shows improved color image quality and an increasedoperation speed of an infrared light signal compared with its oppositestructure, that is, a structure that the infrared photo-sensing deviceis nearer to the light-receiving side than the visible light sensingdevice. Accordingly, optical and electrical performance of the imagesensor may be improved and thus realize a high performance image sensor.

In addition, the image sensor of some example embodiments includes anorganic photoelectric conversion layer on a semiconductor substrate as avisible light sensing device may largely reduce a thickness of thevisible light sensing device and thus an optical crosstalk compared witha structure of including the visible light sensing device including aninorganic semiconductor such as silicon (Si).

Specifically, as for an image sensor having a structure of stacking aninorganic visible light sensing device including an inorganicsemiconductor and an inorganic infrared photo-sensing device includingan inorganic semiconductor, an absorption coefficient of the inorganicsemiconductor is a lot changed depending on a wavelength, light in adifferent wavelength spectrum of light is absorbed depending on a depthof the inorganic semiconductor, and accordingly, a very thick thicknessof greater than or equal to about 4 μm may be required to absorb lightof all the wavelengths including red, green and blue wavelength spectrumof lights in the visible wavelength spectrum of light. In addition, thefocusing lens, the inorganic visible light sensing device, and theinorganic infrared photo-sensing device have a wider distance amongthemselves due to this thick thickness, incident light controlled fromthe focusing lens do not effectively reach the inorganic visible lightsensing device and the inorganic infrared photo-sensing device and thusgenerates an optical crosstalk. Accordingly, performance of the imagesensor may be deteriorated.

On the contrary, a visible light sensing device including an organicphotoelectric conversion layer has a thickness of less than or equal toabout 1.5 μm, for example, less than or equal to about 1 μm but mayeffectively absorb light of all the wavelength in the visible wavelengthspectrum of light, thus reduce an optical crosstalk as well as realize athin image sensor, and resultantly, realize a high performance imagesensor.

In some example embodiments, the infrared photo-sensing device 200 willbe understood to be a device including one or more photodiodesconfigured to sense (e.g., selectively absorb) light in a firstwavelength spectrum of light, and the visible light sensing device 100will be understood to be a device including a photoelectric conversiondevice configured to sense (e.g., selectively absorb) light in a secondwavelength spectrum of light. As shown in FIG. 2, the first wavelengthspectrum of light may be an infrared wavelength spectrum of light, andthe second wavelength spectrum of light may be a visible wavelengthspectrum of light. However, it will be understood that, in some exampleembodiments, one or more photodiodes 220 a, 220 b, 220 c may beconfigured to sense light in a first wavelength spectrum of light thatis not an infrared wavelength spectrum of light (e.g., a visiblewavelength spectrum of light, an ultraviolet wavelength spectrum oflight, some combination thereof, or the like), and the photoelectricconversion device 120 may be configured to sense light in a secondwavelength spectrum of light that is not a visible wavelength spectrumof light (e.g., an infrared wavelength spectrum of light, an ultravioletwavelength spectrum of light, some combination thereof, or the like).

FIG. 7 is a cross-sectional view showing another example of the imagesensor of FIG. 1.

The image sensor 300 according to some example embodiments includes thevisible light sensing device 100 and the infrared photo-sensing device200, and herein, the visible light sensing device 100 includes thephotoelectric conversion device 120 including the lower electrodes 121a, 121 b, and 121 c, the upper electrode 122, and the photoelectricconversion layer 123; and the color filter layer 110 including the colorfilters 110 a, 110 b, and 110 c, and the infrared photo-sensing device200 includes the photodiodes 220 a, 220 b, and 220 c integrated in thesemiconductor substrate 210, like the example embodiments shown in FIG.2. In addition, the image sensor 300 according to some exampleembodiments includes the charge storages 230 a, 230 b, and 230 c, theinsulation layer 310, the planarization layer 320, the focusing lens330, and the bandpass filter 340 like the example embodiments shown inFIG. 2.

However, the image sensor 300 according to some example embodimentsfurther includes a visible light blocking film 350 disposed between thesemiconductor substrate 210 and the photoelectric conversion device 120.

The visible light blocking film 350 absorbs and/or reflects light in avisible wavelength spectrum of light and thus may prevent an inflow ofextra visible light into the photodiodes 220 a, 220 b, and 220 c of thesemiconductor substrate 210. The visible light blocking film 350 may befor example a light-blocking film called to be a black matrix.

The visible light blocking film 350 may be formed on the whole surface210 a (“an entirety of the surface 210 a) of the semiconductor substrate210 or as an island corresponding to the photodiodes 220 a, 220 b, and220 c per each pixel.

As described further herein, the image sensor 300 may include one ormore filtering elements, and the visible light blocking film 350 may beunderstood to be a filtering element.

FIG. 8 is a cross-sectional view showing another example of the imagesensor of FIG. 1.

The image sensor 300 according to some example embodiments includes thevisible light sensing device 100 and the infrared photo-sensing device200 similar to the example embodiments of the image sensor 300 describedabove with reference to FIG. 2, and herein, the visible light sensingdevice 100 includes the photoelectric conversion device 120 includingthe lower electrodes 121 a, 121 b, and 121 c, the upper electrode 122,and the photoelectric conversion layer 123; and the infraredphoto-sensing device 200 includes the color filter layer 110 includingthe color filters 110 a, 110 b, and 110 c and the photodiode 220 a, 220b, and 220 c integrated in the semiconductor substrate 210. In addition,the image sensor 300 according to some example embodiments includes thecharge storages 230 a, 230 b, and 230 c, the insulation layer 310, theplanarization layer 320, the focusing lens 330, and the bandpass filter340, similarly to the example embodiments of the image sensor 300described above with reference to FIG. 2.

However, the image sensor 300 according to some example embodimentsfurther includes a transflective layer 360 between the semiconductorsubstrate 210 and the photoelectric conversion device 120.

The transflective layer 360 may be configured to selectively reflectlight in at least one part of a visible wavelength spectrum of light buttransmit light in an infrared wavelength spectrum of light and thus mayprevent an inflow of extra visible light into the photodiodes 220 a, 220b, and 220 c of the semiconductor substrate 210. The reflected light ofa visible wavelength spectrum of light by the transflective layer 360 isreabsorbed in the photoelectric conversion layer 123 of thephotoelectric conversion device 120 and thus may increase opticalefficiency of the photoelectric conversion device 120.

As described further herein, the image sensor 300 may include one ormore filtering elements, and the transflective layer 360 may beunderstood to be a filtering element.

The transflective layer 360 may be formed in each place corresponding tothe photodiodes 220 a, 220 b, and 220 c in each pixel. The transflectivelayer 360 may have the same thickness or a different thickness in eachpixel. When the transflective layer 360 may have a different thicknessin each pixel, the thickness of the transflective layer 360 in eachpixel may be determined depending on a light-reflected visiblewavelength spectrum of light. For example, the transflective layer 360may have a thicker thickness in a red pixel than in green and bluepixels and in addition, in the green pixel than in the blue pixel but isnot limited thereto. The transflective layer 360 selectively reflectslight of a red wavelength spectrum of light in the red pixel, thereflected light is reabsorbed in the photoelectric conversion layer 123of the red pixel, light of a green wavelength spectrum of light isselectively reflected by the transflective layer 360 in the green pixeland thus reabsorbed in the photoelectric conversion layer 123 of thegreen pixel, and light in a transflective layer 360 is selectivelyreflected and thus reabsorbed in the photoelectric conversion layer 123of the blue pixel. Accordingly, the photoelectric conversion device 120may increase optical efficiency.

The transflective layer 360 may for example have a distributed Braggreflection (DBR) structure but is not limited thereto. The transflectivelayer 360 may for example have a structure that a high refractive indexfilm and a low refractive index film are alternately stacked, and thehigh refractive index film may for example have a refractive index ofabout 2.0 to about 2.8, and the low refractive index film may forexample have a refractive index of about 1.1 to about 1.8 and includeabout 5 layers to about 50 layers but is not limited thereto. The highrefractive index film and the low refractive index film mayindependently include oxide, nitride, and/or oxynitride, for example,the high refractive index film may include titanium oxide, and the lowrefractive index film may include silicon oxide but is not limitedthereto. The high refractive index film and the low refractive indexfilm may have a thickness determined depending on a refractive index anda reflection wavelength, for example, respectively in a range of about10 nm to about 300 nm.

While the image sensors 300 shown in FIGS. 2, 7-8 include the colorfilter layer 110 and bandpass filter 340, it will be understood that insome example embodiments, the image sensor 300 may omit one more of thecolor filter layer 110, bandpass filter 340, visible light blocking film350, and transflective layer 360. In addition, in some exampleembodiments, the image sensor 300 may include one more of the colorfilter layer 110, bandpass filter 340, visible light blocking film 350,and transflective layer 360 in various relative positions, in relationto the semiconductor substrate 210, that are different from the relativepositions shown in at least FIGS. 2, 7-8.

As described herein, each of the color filter layer 110 (including oneor more color filters 110 a, 110 b, and 110 c), the bandpass filter 340,the visible light blocking film 350, and the transflective layer 360 maybe referred to as being a “filtering element.” As described herein, a“filtering element” may be configured to selectively transmit at least aportion of an infrared wavelength spectrum of light (including at leasta portion of an infrared wavelength spectrum of light that the one ormore photodiodes 220 a, 220 b, and 220 c are configured to sense) and avisible wavelength spectrum of light (including at least a portion ofthe visible wavelength spectrum of light that the photoelectricconversion device 120 is configured to sense). It will be understoodthat a “filtering element” as described herein may be configured toselectively transmit only some or all of an infrared wavelength spectrumof light that one or more photodiodes 220 a, 220 b, and 220 c areconfigured to sense and not any light in any visible wavelength spectrumof light that the photoelectric conversion device 120 is configured tosense, or may be configured to selectively transmit only a portion of avisible wavelength spectrum of light that the photoelectric conversiondevice 120 is configured to sense and not any light in any infraredwavelength spectrum of light that one or more photodiodes 220 a, 220 b,and 220 c are configured to sense.

FIG. 9 is a schematic diagram of an electronic device 1100 according tosome example embodiments.

As shown in FIG. 9, an electronic device 1100 may include a processor1120, a memory 1130, and an image sensor 1140 that are electricallycoupled together via a bus 1110. The image sensor 1140 may be an imagesensor of any of the example embodiments as described herein. The memory1130, which may be a non-transitory computer readable medium, may storea program of instructions. The processor 1120 may execute the storedprogram of instructions to perform one or more functions. For example,the processor 1120 may be configured to process electric signalsgenerated by the image sensor 1140. The processor 1120 may be configuredto generate an output (e.g., an image to be displayed on a displayinterface) based on processing the electric signals.

While this disclosure has been described in connection with what ispresently considered to be practical example embodiments, it is to beunderstood that the inventive concepts is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed is:
 1. An image sensor, comprising: a photodiode withina semiconductor substrate, the photodiode configured to sense infraredlight, the infrared light being light in an infrared wavelength spectrumof light; a photoelectric conversion device on the semiconductorsubstrate, the photoelectric conversion device configured to sense lightin a visible wavelength spectrum of light, the photoelectric conversiondevice including a pair of electrodes facing each other, and aphotoelectric conversion layer between the pair of electrodes, thephotoelectric conversion layer configured to selectively absorb light inthe visible wavelength spectrum of light; a plurality of color filterson the photoelectric conversion device, such that the photoelectricconversion device is between the plurality of color filters and thesemiconductor substrate; a transparent insulation layer between thesemiconductor substrate and the photoelectric conversion device; and avisible light blocking film between the semiconductor substrate and thephotoelectric conversion device such that the visible light blockingfilm is between the photoelectric conversion device and the photodiodewithin the semiconductor substrate, the visible light blocking filmfurther between the semiconductor substrate and the transparentinsulation layer, the visible light blocking film configured to absorband/or reflect visible light, the visible light blocking filmoverlapping at least an entirety of the photodiode, such that thevisible light blocking film is configured to selectively transmit theinfrared light to the photodiode, wherein at least one color filter ofthe plurality of color filters has an average light transmittance ofgreater than or equal to about 70% in an infrared wavelength spectrum oflight of about 800 nm to about 1000 nm.
 2. The image sensor of claim 1,wherein the photoelectric conversion layer is configured to absorb lightin an entirety of the visible wavelength spectrum of light.
 3. The imagesensor of claim 1, wherein the photoelectric conversion layer includes ap-type semiconductor and an n-type semiconductor, and the n-typesemiconductor includes fullerene or a fullerene derivative.
 4. The imagesensor of claim 3, wherein at least one semiconductor of the p-typesemiconductor and the n-type semiconductor includes a light absorbingmaterial configured to absorb light in at least a part of the visiblewavelength spectrum of light, and the p-type semiconductor and then-type semiconductor are collectively configured to absorb light in anentirety of the visible wavelength spectrum of light.
 5. The imagesensor of claim 3, wherein each semiconductor of the p-typesemiconductor and the n-type semiconductor is configured to notsubstantially absorb light in the infrared wavelength spectrum of light.6. The image sensor of claim 3, wherein the photoelectric conversionlayer includes an amount of the n-type semiconductor that is equal orgreater than an amount of the p-type semiconductor in the photoelectricconversion layer.
 7. The image sensor of claim 1, wherein thephotoelectric conversion layer is an organic photoelectric conversionlayer that includes at least one organic light absorbing material. 8.The image sensor of claim 1, wherein each color filter of the pluralityof color filters is configured to transmit light in at least onewavelength spectrum of light of a red wavelength spectrum of light, agreen wavelength spectrum of light, and a blue wavelength spectrum oflight, and light in the infrared wavelength spectrum of light.
 9. Theimage sensor of claim 1, wherein each color filter of the plurality ofcolor filters is selected from a red filter, a blue filter, a greenfilter, a cyan filter, a magenta filter, a yellow filter, and a whitefilter.
 10. The image sensor of claim 1, wherein the photodiode is atleast partially within the semiconductor substrate at a depth of about 0nm to about 7000 nm from a surface of the semiconductor substrate. 11.The image sensor of claim 1, wherein the visible light blocking filmincludes a black matrix.
 12. The image sensor of claim 1, furthercomprising: a bandpass filter on the plurality of color filters andconfigured to selectively transmit light in the visible wavelengthspectrum of light and light in the infrared wavelength spectrum oflight.
 13. An image sensor, comprising: a color filter, an organicphotoelectric conversion device, a transparent insulation layer, avisible light blocking film, and an inorganic photodiode that aresequentially stacked from a light incidence direction, wherein theorganic photoelectric conversion device is configured tophotoelectrically convert light in a visible wavelength spectrum oflight that passes the color filter, wherein the inorganic photodiode isconfigured to sense infrared light, the infrared light being light in aninfrared wavelength spectrum of light, and wherein the visible lightblocking film is configured to absorb and/or reflect visible light, andthe visible light blocking film overlaps at least an entirety of theinorganic photodiode, such that the visible light blocking film isconfigured to selectively transmit the infrared light to the inorganicphotodiode, wherein the color filter and the organic photoelectricconversion device are on a semiconductor substrate, wherein theinorganic photodiode is within the semiconductor substrate, wherein theinorganic photodiode is at least partially within the semiconductorsubstrate at a depth of about 0 nm to about 7000 nm from a surface ofthe semiconductor substrate, wherein the color filter has an averagelight transmittance of greater than or equal to about 70% in an infraredwavelength spectrum of light of about 800 nm to about 1000 nm.
 14. Theimage sensor of claim 13, wherein the organic photoelectric conversiondevice includes a pair of electrodes facing each other, and an organicphotoelectric conversion layer between the pair of electrodes andconfigured to selectively absorb light in the visible wavelengthspectrum of light.
 15. The image sensor of claim 14, wherein the organicphotoelectric conversion layer includes an organic light absorbingmaterial, and fullerene or a fullerene derivative.
 16. The image sensorof claim 14, wherein the organic photoelectric conversion layer isconfigured to absorb light in an entirety of the visible wavelengthspectrum of light.
 17. The image sensor of claim 13, wherein the colorfilter includes at least one filter of a red filter, a blue filter, agreen filter, a cyan filter, a magenta filter, a yellow filter, and awhite filter.
 18. An electronic device comprising the image sensor ofclaim
 13. 19. An electronic device comprising the image sensor ofclaim
 1. 20. The image sensor of claim 1, wherein the plurality of colorfilters includes at least one filter of a cyan filter, a magenta filter,a yellow filter, and a white filter.
 21. The image sensor of claim 13,wherein the color filter includes at least one filter of a cyan filter,a magenta filter, a yellow filter, and a white filter.